Busque con el número de pieza junto con el fabricante o la descripción
IRF9530NS |
Click to view a larger image
| Part Number | IRF9530NS |
| Manufacturer | INCHANGE |
| Description | isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VAL. |
| Features |
·Static drain-source on-resistance: RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -14 PD Total Dissipation @TC=25℃ 79 Tj Max. Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAME. |
| Datasheet |
 IRF9530NS Data Sheet
PDF 249.15KB |
| Distributor | Stock | Price | Buy |
|---|
IRF9530NS |
| Part Number | IRF9530NS |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | l l D VDSS = -100V RDS(on) = 0.20Ω G ID = -14A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Po. |
| Features | sipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9530NL) is available for lowprofile applications. D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipa. |
IRF9530NS |
| Part Number | IRF9530NS |
| Manufacturer | VBsemi |
| Title | P-Channel MOSFET |
| Description | IRF9530NS-VB IRF9530NS-VB Datasheet P-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Max. -100 0.22 at VGS = - 10 V 0.24 at VGS = - 4.5 V ID (A) - 12 - 10 Qg (Typ.) 67 D2PAK (TO-263) S G FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Trench. |
| Features |
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Switch • Load Switch in High Current Applications • DC/DC Converters GD S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS C. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF9530N |
International Rectifier |
Power MOSFET |
|
| 2 | IRF9530N |
INCHANGE |
P-Channel MOSFET |
|
| 3 | IRF9530NL |
International Rectifier |
Power MOSFET |
|
| 4 | IRF9530NL |
INCHANGE |
P-Channel MOSFET |
|
| 5 | IRF9530NLPbF |
Infineon |
Power MOSFET |
|
| 6 | IRF9530NLPBF |
International Rectifier |
Power MOSFET |
|
| 7 | IRF9530NPBF |
International Rectifier |
Power MOSFET |
|
| 8 | IRF9530NSPbF |
Infineon |
Power MOSFET |
|
| 9 | IRF9530NSPBF |
International Rectifier |
Power MOSFET |
|
| 10 | IRF9530NSTRR |
International Rectifier |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
|