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IRF9530NSTRR |
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| Part Number | IRF9530NSTRR |
| Manufacturer | International Rectifier |
| Description | l l D VDSS = -100V RDS(on) = 0.20Ω G ID = -14A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with a. |
| Features | sipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9530NL) is available for lowprofile applications. D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and. |
| Datasheet |
 IRF9530NSTRR Data Sheet
PDF 173.15KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF9530NS |
International Rectifier |
Power MOSFET |
|
| 2 | IRF9530NS |
VBsemi |
P-Channel MOSFET |
|
| 3 | IRF9530NS |
INCHANGE |
P-Channel MOSFET |
|
| 4 | IRF9530NSPbF |
Infineon |
Power MOSFET |
|
| 5 | IRF9530NSPBF |
International Rectifier |
Power MOSFET |
|
| 6 | IRF9530N |
International Rectifier |
Power MOSFET |
|
| 7 | IRF9530N |
INCHANGE |
P-Channel MOSFET |
|
| 8 | IRF9530NL |
International Rectifier |
Power MOSFET |
|
| 9 | IRF9530NL |
INCHANGE |
P-Channel MOSFET |
|
| 10 | IRF9530NLPbF |
Infineon |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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