Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
IRF130 |
| Part Number | IRF130 |
| Manufacturer | Samsung semiconductor |
| Title | N-Channel Power MOSFET |
| Description | . |
| Features | . |
IRF130 |
| Part Number | IRF130 |
| Manufacturer | Seme LAB |
| Title | N-Channel Power MOSFET |
| Description | IRF130 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE 1 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.5. |
| Features |
• HERMETICALLY SEALED TO –3 METAL PACKAGE 1 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 100V 14A 0.18Ω • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE 1.09 (0.043) 0.97 (0.038) dia. 2 plcs. TO –3 Metal Package Pin 1 – Gate Pin 2 – Source Case – Drain A. |
IRF130 |
| Part Number | IRF130 |
| Manufacturer | International Rectifier |
| Title | N-Channel Power MOSFET |
| Description | HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv. |
| Features |
Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear De. |
IRF130 |
| Part Number | IRF130 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel Power MOSFET |
| Description | . |
| Features | . |
IRF130 |
| Part Number | IRF130 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Drain Current ID=14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) ·High Power,High Speed Applications APPLICATIONS ·Switching power supplies ·UPS ·Motor controls ·High energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR. |
| Features | ITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=8A IGSS Gate Source Leakage Current VGS=±20V;VDS=0 IDSS Zero Gate Voltage Drain Current VDS=100V; VGS=0 VSD Diode Forward Voltage IS=14A; VGS=0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF1302 |
International Rectifier |
Power MOSFET |
|
| 2 | IRF1302L |
International Rectifier |
Power MOSFET |
|
| 3 | IRF1302S |
International Rectifier |
Power MOSFET |
|
| 4 | IRF130SMD |
Seme LAB |
N-Channel Power MOSFET |
|
| 5 | IRF131 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 6 | IRF131 |
Samsung semiconductor |
N-Channel Power MOSFET |
|
| 7 | IRF1310LPBF |
International Rectifier |
Power MOSFET |
|
| 8 | IRF1310N |
International Rectifier |
Power MOSFET |
|
| 9 | IRF1310N |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IRF1310NL |
International Rectifier |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
|