Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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IRF140 |
| Part Number | IRF140 |
| Manufacturer | International Rectifier |
| Title | N-Channel Power MOSFET |
| Description | HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv. |
| Features |
Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements ESD Rating: Class 2 per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @ TC = 25°C Pulsed Drain Current PD @ TC = 25°C Maximum Power Dissipation Linear D. |
IRF140 |
| Part Number | IRF140 |
| Manufacturer | Intersil Corporation |
| Title | N-Channel Power MOSFET |
| Description | IRF140 Data Sheet March 1999 File Number 2306.3 28A, 100V, 0.077 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode. |
| Features |
• 28A, 100V • rDS(ON) = 0.077Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Symbol D Ordering Information PART NUMBER IRF140 PACKAGE TO-204AE BRAND IRF140 G NOTE: When ordering, use the entire part number. S Packaging JEDEC TO-204AE DRAIN (FLANGE) SOURCE. |
IRF140 |
| Part Number | IRF140 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel Power MOSFET |
| Description | . |
| Features | . |
IRF140 |
| Part Number | IRF140 |
| Manufacturer | Harris |
| Title | N-Channel Power MOSFETs |
| Description | These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi. |
| Features |
• 28A and 25A, 80V and 100V • rDS(ON) = 0.077Ω and 0.100Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guarante. |
IRF140 |
| Part Number | IRF140 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Drain Current ID=27A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.085Ω(Max) ·High Power,High Speed Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supplies ·UPS,AC and. |
| Features |
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250uA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=15A IGSS Gate Source Leakage Current VGS=±20V;VDS=0 IDSS Zero Gate Voltage Drain Current VDS=100V; VGS=0 VSD Diode Forward Voltage IS=27A; VGS=0 IRF140 MIN . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF1404 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | IRF1404 |
International Rectifier |
Power MOSFET |
|
| 3 | IRF1404L |
International Rectifier |
Power MOSFET |
|
| 4 | IRF1404LPbF |
International Rectifier |
Power MOSFET |
|
| 5 | IRF1404PbF |
International Rectifier |
HEXFET Power MOSFET |
|
| 6 | IRF1404S |
International Rectifier |
Power MOSFET |
|
| 7 | IRF1404S |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IRF1404SPbF |
International Rectifier |
Power MOSFET |
|
| 9 | IRF1404Z |
International Rectifier |
Power MOSFET |
|
| 10 | IRF1404Z |
INCHANGE |
N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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