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IRF140 |
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| Part Number | IRF140 |
| Manufacturer | Harris |
| Description | These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo... |
| Features |
• 28A and 25A, 80V and 100V • rDS(ON) = 0.077Ω and 0.100Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, mo... |
| Document |
 IRF140 Data Sheet
PDF 66.87KB |
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|---|---|---|---|---|
| 1 | IRF140 |
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| 2 | IRF140 |
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| 3 | IRF140 |
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| 4 | IRF140 |
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| 5 | IRF140 |
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Desde 2024. D4U Semiconductor.
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