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IRF140 |
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| Part Number | IRF140 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current ID=27A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.085Ω(Max) ·High Power,High Speed Applications ·Minimum Lot-to-Lot variations for ... |
| Features |
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250uA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=15A IGSS Gate Source Leakage Current VGS=±20V;VDS=0 IDSS Zero Gate Voltage Drain Current VDS=100V; VGS=0 VSD Diode Forward Voltage IS=27A; VGS=0 IRF140 MIN TYPE MAX UNIT 100 V 2.0 4.0 V 0.085 Ω ±100 nA 25 µA 2.5 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The informat... |
| Document |
 IRF140 Data Sheet
PDF 227.68KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF140 |
Harris |
N-Channel Power MOSFETs |
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| 2 | IRF140 |
Seme LAB |
N-Channel Power MOSFET |
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| 3 | IRF140 |
Intersil Corporation |
N-Channel Power MOSFET |
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| 4 | IRF140 |
International Rectifier |
N-Channel Power MOSFET |
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| 5 | IRF140 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
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| 6 | IRF1404 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
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Desde 2024. D4U Semiconductor.
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