Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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IRF730 |
| Part Number | IRF730 |
| Manufacturer | NXP |
| Title | PowerMOS transistor |
| Description | N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The IRF730 is supplied in the SOT78 (TO220AB) co. |
| Features |
• Repetitive Avalanche Rated • Fast switching • High thermal cycling performance • Low thermal resistance g IRF730 SYMBOL d QUICK REFERENCE DATA VDSS = 400 V ID = 7.2 A RDS(ON) ≤ 1 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor . |
IRF730 |
| Part Number | IRF730 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel Power MOSFET |
| Description | . |
| Features | . |
IRF730 |
| Part Number | IRF730 |
| Manufacturer | STMicroelectronics |
| Title | N-Channel Power MOSFET |
| Description | This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC/DC COVERTE. |
| Features |
erating F actor Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature
o o o
Value 400 400 ± 20 5.5 3.5 22 100 0.8 4.0 -65 to 150 150
Uni t V V V A A A W W/ C V/ ns
o o o
C C
( •) Pulse width limited by safe operating area (1) ISD ≤ 5.5 A, di/dt ≤ 90 Α/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX First Digit of the Datecode Being Z or K Identifies Silicon Characterized in. |
IRF730 |
| Part Number | IRF730 |
| Manufacturer | Intersil Corporation |
| Title | N-Channel Power MOSFET |
| Description | IRF730 Data Sheet July 1999 File Number 1580.5 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown aval. |
| Features |
• 5.5A, 400V • rDS(ON) = 1.000Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF730 PACKAGE TO-220AB BRAND IRF730 Symbol D NOTE: When ordering, use the ent. |
IRF730 |
| Part Number | IRF730 |
| Manufacturer | Vishay |
| Title | Power MOSFET |
| Description | Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to a. |
| Features |
• Dynamic dV/dt rating • Repetitive avalanche rated Available • Fast switching Available • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) ter. |
IRF730 |
| Part Number | IRF730 |
| Manufacturer | nELL |
| Title | N-Channel Power MOSFET |
| Description | The Nell IRF730 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are designed as an extremely efficient and reliable device for use in a wi. |
| Features | RDS(ON) = 1.00Ω @ VGS = 10V Ultra low gate charge(22nC Max.) Low reverse transfer capacitance (CRSS = 4pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IRF730A) D (Drain) G (Gate) S (Source) PRODUCT . |
IRF730 |
| Part Number | IRF730 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | MOSFET IRF730 N-channel mosfet transistor INCHANGE Features With TO-220 package Simple drive requirements Fast switching V DSS=400V; RDS(ON)1.0 ;I 1.gate 2.drain 3.source D=5.5A Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage (VGS=0) 400 V VGS Ga. |
| Features | With TO-220 package Simple drive requirements Fast switching V DSS=400V; RDS(ON)1.0 ;I 1.gate 2.drain 3.source D=5.5A Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage (VGS=0) 400 V VGS Gate-source voltage 20 ID Drain Current-continuous@ TC=25 5.5 Ptot Total Dissipation@TC=25 74 Tj Max. Operating Junction temperature 150 V A W Tstg Storage . |
IRF730 |
| Part Number | IRF730 |
| Manufacturer | Advanced Power Electronics |
| Title | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Description | APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost. G DS The TO-220 and package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC converters and h. |
| Features | al Data Symbol Parameter Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data & specifications subject to change without notice Rating 400 ±20 5.5 3.5 22 74 0.59 152 5.5 -55 to 150 -55 to 150 Units V V A A A W W/℃ mJ A ℃ ℃ Max. Max. Value 1.7 62 Unit ℃/W ℃/W 200420071-1/4 IRF730 Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF7301 |
International Rectifier |
Power MOSFET |
|
| 2 | IRF7301PBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 3 | IRF7303 |
International Rectifier |
Power MOSFET |
|
| 4 | IRF7303PbF |
International Rectifier |
Power MOSFET |
|
| 5 | IRF7303QPBF |
International Rectifier |
Power MOSFET |
|
| 6 | IRF7304 |
International Rectifier |
Generation V Technology |
|
| 7 | IRF7304PBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 8 | IRF7304QPBF |
International Rectifier |
Power MOSFET |
|
| 9 | IRF7306 |
International Rectifier |
HEXFET Power MOSFET |
|
| 10 | IRF7306QPBF |
International Rectifier |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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