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IRF730 |
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| Part Number | IRF730 |
| Manufacturer | NTE |
| Description | IRF730 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Type Package D Features: D Repetitive Avalanche Rated D Dynamic dv/dt Rating D Fast Switching D Simple Drive Requirements D Eas... |
| Features |
D Repetitive Avalanche Rated D Dynamic dv/dt Rating D Fast Switching D Simple Drive Requirements D Ease of Paralleling
G S
Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Continuous Drain Current (VGS = 10V), ID
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .... |
| Document |
 IRF730 Data Sheet
PDF 67.60KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF730 |
NXP |
PowerMOS transistor |
|
| 2 | IRF730 |
STMicroelectronics |
N-Channel Power MOSFET |
|
| 3 | IRF730 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 4 | IRF730 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 5 | IRF730 |
Vishay |
Power MOSFET |
|
| 6 | IRF730 |
nELL |
N-Channel Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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