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IRF730 |
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| Part Number | IRF730 |
| Manufacturer | Intersil Corporation |
| Description | IRF730 Data Sheet July 1999 File Number 1580.5 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power M... |
| Features |
• 5.5A, 400V • rDS(ON) = 1.000Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF730 PACKAGE TO-220AB BRAND IRF730 Symbol D NOTE: When ordering, use the entire part number. G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-232 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http:/... |
| Document |
 IRF730 Data Sheet
PDF 54.27KB |
Desde 2024. D4U Semiconductor.
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