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| Part Number | IRF730 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various... |
| Features |
erating F actor Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature
o o o
Value 400 400 ± 20 5.5 3.5 22 100 0.8 4.0 -65 to 150 150
Uni t V V V A A A W W/ C V/ ns
o o o
C C
( •) Pulse width limited by safe operating area (1) ISD ≤ 5.5 A, di/dt ≤ 90 Α/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet August 1998 1/8 IRF730 THERMAL DATA R t hj-ca se Rthj -amb R thc- si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sin... |
| Document |
 IRF730 Data Sheet
PDF 94.18KB |
Desde 2024. D4U Semiconductor.
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