Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
IRFF110 |
| Part Number | IRFF110 |
| Manufacturer | GE Solid State |
| Title | (IRFF110 - IRFF113) Power MOS Field-Effect Transistors |
| Description | www.DataSheet4U.com . |
| Features | . |
IRFF110 |
| Part Number | IRFF110 |
| Manufacturer | International Rectifier |
| Title | HEXFET TRANSISTORS |
| Description | PD - 90423C REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS IRFF110 100V RDS(on) .60Ω ID 3.5A IRFF110 JANTX2N6782 JANTXV2N6782 REF:MIL-PRF-19500/556 100V, N-CHANNEL The HEXFETtechnology is the key to International Rectifier’s a. |
| Features | n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling Absolute Maximum Ratings ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Volta. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFF111 |
GE Solid State |
(IRFF110 - IRFF113) Power MOS Field-Effect Transistors |
|
| 2 | IRFF112 |
GE Solid State |
(IRFF110 - IRFF113) Power MOS Field-Effect Transistors |
|
| 3 | IRFF113 |
GE Solid State |
(IRFF110 - IRFF113) Power MOS Field-Effect Transistors |
|
| 4 | IRFF120 |
Seme LAB |
N-CHANNEL POWER MOSFET |
|
| 5 | IRFF120 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 6 | IRFF120 |
International Rectifier |
N-channel Transistors |
|
| 7 | IRFF120 |
GE Solid State |
N-Channel MOSFET |
|
| 8 | IRFF121 |
GE Solid State |
N-Channel MOSFET |
|
| 9 | IRFF122 |
GE Solid State |
N-Channel MOSFET |
|
| 10 | IRFF123 |
GE Solid State |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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