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| Distributor | Stock | Price | Buy |
|---|
IRFF120 |
| Part Number | IRFF120 |
| Manufacturer | International Rectifier |
| Title | N-channel Transistors |
| Description | The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high trans conductance. The HEXFET transistors al. |
| Features |
Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements ESD Rating: Class 1B per MIL-STD-750, Method 1020 They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. Absolute Maximum Ratings Symbol Parameter Value ID1 @ VGS = 10V, TC = 25°C ID2 @ . |
IRFF120 |
| Part Number | IRFF120 |
| Manufacturer | GE Solid State |
| Title | N-Channel MOSFET |
| Description | www.DataSheet4U.com . |
| Features | . |
IRFF120 |
| Part Number | IRFF120 |
| Manufacturer | Seme LAB |
| Title | N-CHANNEL POWER MOSFET |
| Description | 2N6788 IRFF120 MECHANICAL DATA Dimensions in mm (inches) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) N–CHANNEL POWER MOSFET ENHANCEMENT MODE 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. FEATURES • AVALANCHE ENERGY RATING • SI. |
| Features |
• AVALANCHE ENERGY RATING • SIMPLE DRIVE REQUIREMENTS • HERMETICALLY SEALED 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) 2 13 2.54 (0.100) 45° TO39 Package (TO-205AF) Underside View Pin 1 - Source Pin 2 - Gate Pin 3 - Drain and Case APPLICATIONS • FAST SWITCHING • MOTOR CONTROLS • POWER SUPPLIES ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS Drain Source Vol. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFF121 |
GE Solid State |
N-Channel MOSFET |
|
| 2 | IRFF122 |
GE Solid State |
N-Channel MOSFET |
|
| 3 | IRFF123 |
GE Solid State |
N-Channel MOSFET |
|
| 4 | IRFF110 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 5 | IRFF110 |
GE Solid State |
(IRFF110 - IRFF113) Power MOS Field-Effect Transistors |
|
| 6 | IRFF110 |
International Rectifier |
HEXFET TRANSISTORS |
|
| 7 | IRFF111 |
GE Solid State |
(IRFF110 - IRFF113) Power MOS Field-Effect Transistors |
|
| 8 | IRFF112 |
GE Solid State |
(IRFF110 - IRFF113) Power MOS Field-Effect Transistors |
|
| 9 | IRFF113 |
GE Solid State |
(IRFF110 - IRFF113) Power MOS Field-Effect Transistors |
|
| 10 | IRFF130 |
Intersil Corporation |
N-Channel Power MOSFET |
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Desde 2024. D4U Semiconductor.
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