Busque con el número de pieza junto con el fabricante o la descripción
IRFP460 |
Click to view a larger image
| Part Number | IRFP460 |
| Manufacturer | International Rectifier |
| Description | . |
| Features | . |
| Datasheet |
 IRFP460 Data Sheet
PDF 163.68KB |
| Distributor | Stock | Price | Buy |
|---|
IRFP460 |
| Part Number | IRFP460 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Pluse 8. |
| Features |
·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Dra. |
IRFP460 |
| Part Number | IRFP460 |
| Manufacturer | Intersil Corporation |
| Title | N-Channel Power MOSFET |
| Description | IRFP460 Data Sheet July 1999 File Number 2291.3 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode. |
| Features |
• 20A, 500V • rDS(ON) = 0.270Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFP460 PACKAGE TO-247 BRAND IRFP460 Symbol D NOTE: When ordering, use the enti. |
IRFP460 |
| Part Number | IRFP460 |
| Manufacturer | ST Microelectronics |
| Title | N-Channel Power MOSFET |
| Description | The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. 3 2 1 TO-247 INTERNAL SCHEMATIC DIA. |
| Features |
) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
( •)Pulse width limited by safe operating area May 2001 Value 500 500 ±30 18.4 11.6 73.6 220 1.75 3.5 –65 to 150 150 Unit V V V A A A W W/°C V/ns °C °C (1)ISD ≤18.4A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJ. |
IRFP460 |
| Part Number | IRFP460 |
| Manufacturer | Fairchild Semiconductor |
| Title | Power MOSFET |
| Description | $GYDQFHG 3RZHU 026)(7 IRFP460 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 0.197Ω (Typ.) Absolute Maximum Ratings Symbol VDS. |
| Features | ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 0.197Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain. |
IRFP460 |
| Part Number | IRFP460 |
| Manufacturer | NXP |
| Title | PowerMOS transistor |
| Description | N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The IRFP460 is supplied in the SOT429 (TO247) co. |
| Features |
• Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance IRFP460 SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 20 A RDS(ON) ≤ 0.27 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power su. |
IRFP460 |
| Part Number | IRFP460 |
| Manufacturer | Vishay |
| Title | Power MOSFET |
| Description | Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-22. |
| Features |
• Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole Available • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, p. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFP460A |
International Rectifier |
Power MOSFET |
|
| 2 | IRFP460A |
Vishay Siliconix |
Power MOSFET |
|
| 3 | IRFP460A |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IRFP460APBF |
International Rectifier |
Power MOSFET |
|
| 5 | IRFP460APBF |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IRFP460AS |
International Rectifier |
Power MOSFET |
|
| 7 | IRFP460B |
Vishay Siliconix |
Power MOSFET |
|
| 8 | IRFP460B |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IRFP460C |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 10 | IRFP460LC |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
Desde 2024. D4U Semiconductor.
|