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IRF240

Inchange Semiconductor
IRF240
Part Number IRF240
Manufacturer Inchange Semiconductor
Title N-Channel MOSFET Transistor
Description ·Drain Current ID=18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) APPLICATIONS ·Swi...
Features AL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=10A IGSS Gate Source Leakage Current VGS=±20V;VDS=0 IDSS Zero Gate Voltage ...

Datasheet IRF240 pdf datasheet - 42.44KB



IRF240

Samsung semiconductor
IRF240
Part Number IRF240
Manufacturer Samsung semiconductor
Title N-Channel Power MOSFET
Description .
Features .

Datasheet IRF240 pdf datasheet




IRF240

Fairchild Semiconductor
IRF240
Part Number IRF240
Manufacturer Fairchild Semiconductor
Title N-Channel Power MOSFET
Description .
Features .

Datasheet IRF240 pdf datasheet




IRF240

Intersil Corporation
IRF240
Part Number IRF240
Manufacturer Intersil Corporation
Title N-Channel Power MOSFET
Description IRF240 Data Sheet March 1999 File Number 1584.3 18A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power fi.
Features
• 18A, 200V
• rDS(ON) = 0.180Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Info.

Datasheet IRF240 pdf datasheet




IRF240

International Rectifier
IRF240
Part Number IRF240
Manufacturer International Rectifier
Title REPETITIVE AVALANCHE AND dv/dt RATED
Description www..com PD - 90370 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IR.
Features n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 0V, TC = 25°C ID @ VGS = 0V, TC = 100°C I DM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuou.

Datasheet IRF240 pdf datasheet




IRF240

Seme LAB
IRF240
Part Number IRF240
Manufacturer Seme LAB
Title N-Channel Power MOSFET
Description IRF240 MECHANICAL DATA Dimensions in mm (inches) 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. N–CHANNEL POWER MOSFET FOR HI–R.
Features
• HERMETICALLY SEALED TO3 METAL PACKAGE 16.97 (0.668) 16.87 (0.664)
• SIMPLE DRIVE REQUIREMENTS
• SCREENING OPTIONS AVAILABLE TO3 METAL PACKAGE Pin 1 = Source Pin 2 Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RqJC RqJA Gate
  – Source Voltage Cont.

Datasheet IRF240 pdf datasheet





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