Part Number | IRF240 |
Manufacturer | Inchange Semiconductor |
Title | Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) TO-3 |
Description | ·Drain Current ID=18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ·Audio amplifier and servo motors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMET... |
Features |
AL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=10A
IGSS Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS Zero Gate Voltage Drain Current VDS=200V; VGS=0
VSD Diode Forward Voltage
IS=18A; VGS=0
Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance
VDS=25V; VGS=0V; fT=1MHz
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off Delay Time
RGS=12.5Ω ID=10A; VDD=90V; RL=50Ω... |
Document |
![]() |
Distributor |
![]() Arrow Electronics All other distributors |
Stock | 700 In Stock |
Price | 50 units: 22.4135 USD 25 units: 22.5515 USD 10 units: 23.1035 USD 4 units: 23.276 USD
|
BuyNow |
![]() |
Part Number | IRF240 |
Manufacturer | Seme LAB |
Title | N-Channel Power MOSFET |
Description | IRF240 MECHANICAL DATA Dimensions in mm (inches) 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. N–CHANNEL POWER MOSFET FOR HI–R. |
Features |
• HERMETICALLY SEALED TO3 METAL PACKAGE 16.97 (0.668) 16.87 (0.664) • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE TO3 METAL PACKAGE Pin 1 = Source Pin 2 Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RqJC RqJA Gate – Source Voltage Cont. |
Document | IRF240 datasheet pdf |
Part Number | IRF240 |
Manufacturer | International Rectifier |
Title | REPETITIVE AVALANCHE AND dv/dt RATED |
Description | www.DataSheet4U.com PD - 90370 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IR. |
Features |
n n n n n
Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling
Absolute Maximum Ratings
Parameter
ID @ VGS = 0V, TC = 25°C ID @ VGS = 0V, TC = 100°C I DM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuou. |
Document | IRF240 datasheet pdf |
Part Number | IRF240 |
Manufacturer | Samsung semiconductor |
Title | N-Channel Power MOSFET |
Description | . |
Features |
. |
Document | IRF240 datasheet pdf |
Part Number | IRF240 |
Manufacturer | Intersil Corporation |
Title | N-Channel Power MOSFET |
Description | IRF240 Data Sheet March 1999 File Number 1584.3 18A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power fi. |
Features |
• 18A, 200V • rDS(ON) = 0.180Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Info. |
Document | IRF240 datasheet pdf |
Part Number | IRF240 |
Manufacturer | Fairchild Semiconductor |
Title | N-Channel Power MOSFET |
Description | . |
Features |
. |
Document | IRF240 datasheet pdf |
Since 2024. D4U Semiconductor.
|
Contact Us
|
Privacy Policy