IRF240 |
|
Click to view a larger image
| Part Number | IRF240 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current ID=18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) APPLICATIONS ·Switching power supplies ·Switching converters,motor driv... |
| Features |
AL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=10A
IGSS Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS Zero Gate Voltage Drain Current VDS=200V; VGS=0
VSD Diode Forward Voltage
IS=18A; VGS=0
Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance
VDS=25V; VGS=0V; fT=1MHz
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off Delay Time
RGS=12.5Ω ID=10A; VDD=90V; RL=50Ω... |
| Datasheet |
 IRF240 Data Sheet
PDF 42.44KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
|
|
|
Samsung semiconductor |
N-Channel Power MOSFET |
|
|
|
|
Seme LAB |
N-Channel Power MOSFET |
|
|
|
|
Intersil Corporation |
N-Channel Power MOSFET |
|
|
|
|
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
|
|
|
TT |
N-CHANNEL POWER MOSFET |
|
|
|
|
International Rectifier |
REPETITIVE AVALANCHE AND dv/dt RATED |
|
|
|
|
Seme LAB |
N-Channel Power MOSFET |
|
|
|
|
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
|
|
|
Samsung semiconductor |
N-Channel Power MOSFET |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
|
|
|
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
|
|
|
Samsung semiconductor |
N-Channel Power MOSFET |
|
Desde 2024. D4U Semiconductor.
|
Contáctenos
|
Política de Privacidad