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IRF240 |
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| Part Number | IRF240 |
| Manufacturer | Seme LAB |
| Description | IRF240 MECHANICAL DATA Dimensions in mm (inches) 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDSS ID(cont) RDS(on) 200V 18A 0.18W ... |
| Features |
• HERMETICALLY SEALED TO3 METAL PACKAGE 16.97 (0.668) 16.87 (0.664) • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE TO3 METAL PACKAGE Pin 1 = Source Pin 2 Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RqJC RqJA Gate – Source Voltage Continuous Drain Current @ Tcase = 25°C Continuous Drain Current @ Tcase = 100°C Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient ±20V 18A 11A 72A 125W 1.0W/°C –... |
| Document |
 IRF240 Data Sheet
PDF 19.39KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF240 |
Samsung semiconductor |
N-Channel Power MOSFET |
|
| 2 | IRF240 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 3 | IRF240 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 4 | IRF240 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | IRF240 |
TT |
N-CHANNEL POWER MOSFET |
|
| 6 | IRF240 |
International Rectifier |
REPETITIVE AVALANCHE AND dv/dt RATED |
|
| 7 | IRF240SMD |
Seme LAB |
N-Channel Power MOSFET |
|
| 8 | IRF241 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 9 | IRF241 |
Samsung semiconductor |
N-Channel Power MOSFET |
|
| 10 | IRF241 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
Desde 2024. D4U Semiconductor.
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