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IRF240SMD |
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| Part Number | IRF240SMD |
| Manufacturer | Seme LAB |
| Description | LAB MECHANICAL DATA Dimensions in mm (inches) SEME IRF240SMD N–CHANNEL POWER MOSFET 3 .6 0 (0 .1 4 2 ) M a x . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 ... |
| Features |
200V 13.9A 0.180W
1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
2
1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 )
• HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • HIGH PACKING DENSITIES SMD1 PACKAGE Pad 1 – Gate Pad 2 – Drain Pad 3 – Source Note: IRFNxxx also available with pins 1 and 3 reversed. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS dv/dt T... |
| Document |
 IRF240SMD Data Sheet
PDF 22.63KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF240 |
Samsung semiconductor |
N-Channel Power MOSFET |
|
| 2 | IRF240 |
Seme LAB |
N-Channel Power MOSFET |
|
| 3 | IRF240 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 4 | IRF240 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 5 | IRF240 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | IRF240 |
TT |
N-CHANNEL POWER MOSFET |
|
| 7 | IRF240 |
International Rectifier |
REPETITIVE AVALANCHE AND dv/dt RATED |
|
| 8 | IRF241 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 9 | IRF241 |
Samsung semiconductor |
N-Channel Power MOSFET |
|
| 10 | IRF241 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
Desde 2024. D4U Semiconductor.
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