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IRF241 |
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| Part Number | IRF241 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current ID=18A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) APPLICATIONS ·Switching power supplies ·Switching converters,motor drive... |
| Features |
L CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=10A
IGSS Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS Zero Gate Voltage Drain Current VDS=150V; VGS=0
VSD Diode Forward Voltage
IS=18A; VGS=0
Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance
VDS=25V; VGS=0V; fT=1MHz
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off Delay Time
RGS=12.5Ω ID=10A; VDD=90V; RL=50Ω
... |
| Document |
 IRF241 Data Sheet
PDF 42.46KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF240 |
Samsung semiconductor |
N-Channel Power MOSFET |
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| 2 | IRF240 |
Seme LAB |
N-Channel Power MOSFET |
|
| 3 | IRF240 |
Intersil Corporation |
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| 4 | IRF240 |
Fairchild Semiconductor |
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| 5 | IRF240 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | IRF240 |
TT |
N-CHANNEL POWER MOSFET |
|
| 7 | IRF240 |
International Rectifier |
REPETITIVE AVALANCHE AND dv/dt RATED |
|
| 8 | IRF240SMD |
Seme LAB |
N-Channel Power MOSFET |
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| 9 | IRF241 |
Fairchild Semiconductor |
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| 10 | IRF241 |
Samsung semiconductor |
N-Channel Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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