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IRF240 |
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| Part Number | IRF240 |
| Manufacturer | Intersil Corporation |
| Description | IRF240 Data Sheet March 1999 File Number 1584.3 18A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFETs des... |
| Features |
• 18A, 200V • rDS(ON) = 0.180Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF240 PACKAGE TO-204AE BRAND IRF240 Symbol D NOTE: When ordering, include the entire part number. G S Packaging JEDEC TO-204AE TOP VIEW DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handlin... |
| Document |
 IRF240 Data Sheet
PDF 59.29KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF240 |
Samsung semiconductor |
N-Channel Power MOSFET |
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| 2 | IRF240 |
Seme LAB |
N-Channel Power MOSFET |
|
| 3 | IRF240 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 4 | IRF240 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
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| 5 | IRF240 |
TT |
N-CHANNEL POWER MOSFET |
|
| 6 | IRF240 |
International Rectifier |
REPETITIVE AVALANCHE AND dv/dt RATED |
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| 7 | IRF240SMD |
Seme LAB |
N-Channel Power MOSFET |
|
| 8 | IRF241 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 9 | IRF241 |
Samsung semiconductor |
N-Channel Power MOSFET |
|
| 10 | IRF241 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
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Desde 2024. D4U Semiconductor.
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