Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
IRF450 |
| Part Number | IRF450 |
| Manufacturer | Intersil Corporation |
| Title | N-Channel Power MOSFET |
| Description | IRF450 Data Sheet March 1999 File Number 1827.3 13A, 500V, 0.400 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode. |
| Features |
• 13A, 500V • rDS(ON) = 0.400Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF450 PACKAGE TO-204AA BRAND IRF450 Symbol D NOTE: When ordering, include the . |
IRF450 |
| Part Number | IRF450 |
| Manufacturer | Samsung semiconductor |
| Title | N-Channel Power MOSFET |
| Description | . |
| Features | . |
IRF450 |
| Part Number | IRF450 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·13A,500V ·RDS(on)=0.4Ω ·SOA is Power Dissipation Limited ·Linear Transfer Characteristics ·Related Literature APPLICATIONS ·Designed for applications such as switching regulators, switching convertors ,motor drivers ,relay driver ,and drivers for high power bipolar switching transistors requiring . |
| Features |
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF450
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 7.2A IGSS Gate Source Leakage Current VGS= ±20V; . |
IRF450 |
| Part Number | IRF450 |
| Manufacturer | Seme LAB |
| Title | N-Channel Power MOSFET |
| Description | IRF450 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N–CHANNEL POWER MOSFET 1 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 VDSS ID(cont) RDS(on) FEATURES 500V 13A 0.4W 20.32 (0. |
| Features |
500V 13A 0.4W
20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.070) 1.52 (0.060) 7.87 (0.310) 6.99 (0.275)
• HERMETICALLY SEALED TO –3 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE 1.09 (0.043) 0.97 (0.038) dia. 2 plcs. TO –3 Metal Package Pin 1 – Gate Pin 2 – Source Case – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS IAR dv/dt TJ. |
IRF450 |
| Part Number | IRF450 |
| Manufacturer | International Rectifier |
| Title | N-Channel Power MOSFET |
| Description | HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv. |
| Features |
Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements ESD Rating: Class 3A per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear De. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF451 |
STMicroelectronics |
N-Channel MOSFET |
|
| 2 | IRF451 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | IRF451 |
Samsung semiconductor |
N-Channel Power MOSFET |
|
| 4 | IRF452 |
STMicroelectronics |
N-Channel MOSFET |
|
| 5 | IRF452 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | IRF452 |
Samsung semiconductor |
N-Channel Power MOSFET |
|
| 7 | IRF453 |
STMicroelectronics |
N-Channel MOSFET |
|
| 8 | IRF453 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 9 | IRF453 |
Samsung semiconductor |
N-Channel Power MOSFET |
|
| 10 | IRF4000 |
International Rectifier |
IEEE 802.3af Compliant PoE Switch |
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Desde 2024. D4U Semiconductor.
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