| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Toshiba |
Silicon N-Channel IGBT (1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.05 µs (typ.) (IC = 50 A) FWD : trr = 0.35 µs (typ.) (IF = 15 A) (5) Low |
|
|
|
|
Toshiba |
Silicon N-Channel IGBT (1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.05 µs (typ.) (IC = 50 A) FWD : trr = 0.35 µs (typ.) (IF = 15 A) (5) Low |
|
|
|
|
Toshiba |
Silicon N-Channel IGBT (1) Sixth generation (2) Enhancement mode (3) High-speed switching: tf = 0.15 µs (typ.) (IC = 50 A) (4) Low saturation voltage: VCE(sat) = 1.6 V (typ.) (IC = 50 A) (5) FRD included between emitter and collector 3. Packaging and Internal Circuit GT50 |
|
|
|
|
Toshiba Semiconductor |
TOSHIBA Intelligent Power Module Silicon N Channel IGBT 14. IN (V) FO (L) P 1 2001-11-13 MIG150J7CSB1W Package Dimensions: TOSHIBA 2-108G1A Unit: mm 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) IN ( |
|
|
|
|
Toshiba Semiconductor |
Silicon N Channel IGBT 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturationvoltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off ti |
|
|
|
|
Toshiba Semiconductor |
silicon N-channel IGBT (diode) Symbol Rth (j-c) Rth (j-c) Max 0.89 2.7 Unit °C/W °C/W Equivalent Circuit Collector Marking Part No. (or abbreviation code) Gate Emitter TOSHIBA GT50J327 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2005- |
|
|
|
|
Toshiba Semiconductor |
silicon N-channel IGBT ly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precaut |
|
|
|
|
Toshiba Semiconductor |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
|
|
|
|
Toshiba |
N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) ) Test Condition VGE = ±20V, VCE = 0 VCE = 600V, VGE = 0 VCE = 5V, IC = 150mA IC = 150A, VGE = 15V VCE = 10V, VGE = 0, f = 1MHz ― MG150J1BS11 Min Typ. Max Unit ― ― ±500 nA ― ― 1.0 mA 3.0 ― 6.0 V ― 2.3 2.7 V ― 12000 ― pF ― 0.3 0.8 ― 0.4 1.0 |
|
|
|
|
Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
|
|
|
|
Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
|
|
|
|
Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
|
|
|
|
Toshiba |
GTR Module / Silicon N-Channel IGBT |
|
|
|
|
Toshiba |
TRANSISTOR IGBT |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel IGBT e within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability t |
|
|
|
|
Toshiba Semiconductor |
silicon N-channel IGBT r cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Turn-on switching loss Turn-off switching loss Symbol IGES ICES VGE (OFF) VC |
|
|
|
|
Toshiba Semiconductor |
silicon N-channel IGBT olute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and est |
|
|
|
|
Toshiba Semiconductor |
silicon N-channel IGBT if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/D |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel IGBT perature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute |
|
|
|
|
Toshiba |
N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply wit |
|
Desde 2024. D4U Semiconductor.
|