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GT50J328 |
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| Part Number | GT50J328 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | GT50J328 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J328 Current Resonance Inverter Switching Application Fourth Generation IGBT • • • Enhancement mode type High speed : tf ... |
| Features |
e within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Equivalent Circuit
Collector
Marking
TOSHIBA Gate Emitter
50J328
Part No. (or abbreviation code) Lot No. Note 1
Note 1: A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to e... |
| Document |
 GT50J328 Data Sheet
PDF 221.19KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GT50J322 |
Toshiba Semiconductor |
silicon N-channel IGBT |
|
| 2 | GT50J325 |
Toshiba Semiconductor |
Silicon N-Channel IGBT |
|
| 3 | GT50J327 |
Toshiba Semiconductor |
silicon N-channel IGBT |
|
| 4 | GT50J301 |
Toshiba Semiconductor |
silicon N-channel IGBT |
|
| 5 | GT50J341 |
Toshiba |
Silicon N-Channel IGBT |
|
| 6 | GT50J342 |
Toshiba |
Silicon N-Channel IGBT |
|
Desde 2024. D4U Semiconductor.
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