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GT50J325 |
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| Part Number | GT50J325 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth generation IGBT • Enhancement mode... |
| Features |
perature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance (IGBT) Thermal res... |
| Document |
 GT50J325 Data Sheet
PDF 222.46KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GT50J322 |
Toshiba Semiconductor |
silicon N-channel IGBT |
|
| 2 | GT50J327 |
Toshiba Semiconductor |
silicon N-channel IGBT |
|
| 3 | GT50J328 |
Toshiba Semiconductor |
Silicon N-Channel IGBT |
|
| 4 | GT50J301 |
Toshiba Semiconductor |
silicon N-channel IGBT |
|
| 5 | GT50J341 |
Toshiba |
Silicon N-Channel IGBT |
|
| 6 | GT50J342 |
Toshiba |
Silicon N-Channel IGBT |
|
Desde 2024. D4U Semiconductor.
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