Part Number | MG150J2YS50 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | TOSHIBA GTR Module Silicon N Channel IGBT MG150J2YS50 MG150J2YS50 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case l High input impeda... |
Features |
products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in th... |
Document |
MG150J2YS50 Data Sheet
PDF 212.94KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MG150J1BS11 |
Toshiba |
N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) | |
2 | MG150J1ZS50 |
Toshiba Semiconductor |
Silicon N Channel IGBT | |
3 | MG150J7KS50 |
Toshiba |
TOSHIBA GTR Module Silicon N Channel IGBT | |
4 | MG150J7KS60 |
Toshiba Semiconductor |
GTR MODULE SILICON N CHANNEL IGBT | |
5 | MG150J7KS61 |
Mitsubishi Electric |
High Power Switching Applications Motor Control Applications | |
6 | MG150M2YK1 |
ETC |
TRANSISTOR MODULES |