50JR22 Toshiba Silicon N-Channel IGBT Datasheet. existencias, precio

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50JR22

Toshiba
50JR22
50JR22 50JR22
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Part Number 50JR22
Manufacturer Toshiba (https://www.toshiba.com/)
Description Discrete IGBTs Silicon N-Channel IGBT GT50JR22 GT50JR22 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for a...
Features (1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.05 µs (typ.) (IC = 50 A) FWD : trr = 0.35 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.55 V (typ.) (IC = 50 A) (6) High junction temperature : Tj = 175 (max) 3. Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter Start of commercial production 2012-03 1 2014-01-06 Rev.2.0 GT50JR22 4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Characteristics Sym...

Document Datasheet 50JR22 Data Sheet
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