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GT50J341 |
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| Part Number | GT50J341 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | Discrete IGBTs Silicon N-Channel IGBT GT50J341 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other ap... |
| Features |
(1) Sixth generation (2) Enhancement mode (3) High-speed switching: tf = 0.15 µs (typ.) (IC = 50 A) (4) Low saturation voltage: VCE(sat) = 1.6 V (typ.) (IC = 50 A) (5) FRD included between emitter and collector
3. Packaging and Internal Circuit
GT50J341
TO-3P(N)
1: Gate 2: Collector 3: Emitter
Start of commercial production
2010-06
1
2014-01-07
Rev.3.0
GT50J341
4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage Gate-emitter voltage Collector current (DC) Collector current (1 ms) Diode forward curr... |
| Document |
 GT50J341 Data Sheet
PDF 245.42KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GT50J342 |
Toshiba |
Silicon N-Channel IGBT |
|
| 2 | GT50J301 |
Toshiba Semiconductor |
silicon N-channel IGBT |
|
| 3 | GT50J322 |
Toshiba Semiconductor |
silicon N-channel IGBT |
|
| 4 | GT50J325 |
Toshiba Semiconductor |
Silicon N-Channel IGBT |
|
| 5 | GT50J327 |
Toshiba Semiconductor |
silicon N-channel IGBT |
|
| 6 | GT50J328 |
Toshiba Semiconductor |
Silicon N-Channel IGBT |
|
Desde 2024. D4U Semiconductor.
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