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GT50J327 |
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| Part Number | GT50J327 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | www.DataSheet4U.com GT50J327 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J327 Current Resonance Inverter Switching Application • • • • • • Enhancement mode type High speed :... |
| Features |
(diode) Symbol Rth (j-c) Rth (j-c) Max 0.89 2.7 Unit °C/W °C/W
Equivalent Circuit
Collector
Marking
Part No. (or abbreviation code) Gate Emitter TOSHIBA
GT50J327
Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
1
2005-02-09
GT50J327
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Diode forward voltage Reverse recovery time Symbol IGES ICES VGE (OFF) VCE (sat) Cies ... |
| Document |
 GT50J327 Data Sheet
PDF 184.67KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GT50J322 |
Toshiba Semiconductor |
silicon N-channel IGBT |
|
| 2 | GT50J325 |
Toshiba Semiconductor |
Silicon N-Channel IGBT |
|
| 3 | GT50J328 |
Toshiba Semiconductor |
Silicon N-Channel IGBT |
|
| 4 | GT50J301 |
Toshiba Semiconductor |
silicon N-channel IGBT |
|
| 5 | GT50J341 |
Toshiba |
Silicon N-Channel IGBT |
|
| 6 | GT50J342 |
Toshiba |
Silicon N-Channel IGBT |
|
Desde 2024. D4U Semiconductor.
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