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GT50JR22 |
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| Part Number | GT50JR22 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | Discrete IGBTs Silicon N-Channel IGBT GT50JR22 GT50JR22 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for a... |
| Features |
(1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching
IGBT : tf = 0.05 µs (typ.) (IC = 50 A) FWD : trr = 0.35 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.55 V (typ.) (IC = 50 A) (6) High junction temperature : Tj = 175 (max)
3. Packaging and Internal Circuit
TO-3P(N)
1: Gate 2: Collector 3: Emitter
1 2012-10-15 Rev.1.0
GT50JR22
4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Collector-emitter vo... |
| Document |
 GT50JR22 Data Sheet
PDF 201.59KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GT50JR21 |
Toshiba |
Silicon N-Channel IGBT |
|
| 2 | GT50J101 |
Toshiba |
TRANSISTOR IGBT |
|
| 3 | GT50J102 |
Toshiba Semiconductor |
silicon N-channel IGBT |
|
| 4 | GT50J121 |
Toshiba Semiconductor |
silicon N-channel IGBT |
|
| 5 | GT50J122 |
Toshiba Semiconductor |
silicon N-channel IGBT |
|
| 6 | GT50J123 |
Toshiba |
Silicon N-Channel IGBT |
|
Desde 2024. D4U Semiconductor.
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