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GT50J121 |
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| Part Number | GT50J121 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • • • The 4th generation Enhancement-mode Fast switchi... |
| Features |
r cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Turn-on switching loss Turn-off switching loss Symbol IGES ICES VGE (OFF) VCE (sat) Cies td (on) tr ton td (off) tf toff Eon Eoff Inductive load VCC = 300 V, IC = 50 A VGG = +15 V, RG = 13 Ω (Note 1) (Note 2) Test Condition VGE = ±20 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 5 mA, VCE = 5 V IC = 50 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Min 3.5 Typ. 2.0 7900 0.09 0.07 0.24 0.30 0.05 0.43 1.30 1.34 Max ±500 1... |
| Document |
 GT50J121 Data Sheet
PDF 315.74KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GT50J122 |
Toshiba Semiconductor |
silicon N-channel IGBT |
|
| 2 | GT50J123 |
Toshiba |
Silicon N-Channel IGBT |
|
| 3 | GT50J101 |
Toshiba |
TRANSISTOR IGBT |
|
| 4 | GT50J102 |
Toshiba Semiconductor |
silicon N-channel IGBT |
|
| 5 | GT50J301 |
Toshiba Semiconductor |
silicon N-channel IGBT |
|
| 6 | GT50J322 |
Toshiba Semiconductor |
silicon N-channel IGBT |
|
Desde 2024. D4U Semiconductor.
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