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| Part Number | GT50J102 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode ... |
| Features |
olute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
MARKING
TOSHIBA
GT50J102
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
1 2006-11-01
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
GT50J102
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN TYP. MAX UNIT
Gate Leakage Current
IGES
VGE = ±20V, VCE = 0
― ― ±500 n... |
| Document |
 GT50J102 Data Sheet
PDF 434.80KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GT50J101 |
Toshiba |
TRANSISTOR IGBT |
|
| 2 | GT50J121 |
Toshiba Semiconductor |
silicon N-channel IGBT |
|
| 3 | GT50J122 |
Toshiba Semiconductor |
silicon N-channel IGBT |
|
| 4 | GT50J123 |
Toshiba |
Silicon N-Channel IGBT |
|
| 5 | GT50J301 |
Toshiba Semiconductor |
silicon N-channel IGBT |
|
| 6 | GT50J322 |
Toshiba Semiconductor |
silicon N-channel IGBT |
|
Desde 2024. D4U Semiconductor.
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