Busque con el número de pieza junto con el fabricante o la descripción
MG150J1ZS50 |
Click to view a larger image
| Part Number | MG150J1ZS50 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | MG150J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J1ZS50 High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance l Includ... |
| Features |
25°C)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturationvoltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Reverse current Forward voltage Reverse recovery time Thermal resistance Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) tr ton td (off) tf toff IR VF trr Rth (j-c) VR = 600V IF = 150A, VGE = 0 IF = 150A, VGE = −10V di / dt = 200A / µs Transistor stage Diode stage Inductive load VCC = 300V IC = 150A, VGE = ±15V RG = 6.2Ω (Note 1) Test Conditio... |
| Document |
 MG150J1ZS50 Data Sheet
PDF 252.41KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MG150J1BS11 |
Toshiba |
N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
|
| 2 | MG150J2YS50 |
Toshiba |
N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
|
| 3 | MG150J7KS50 |
Toshiba |
TOSHIBA GTR Module Silicon N Channel IGBT |
|
| 4 | MG150J7KS60 |
Toshiba Semiconductor |
GTR MODULE SILICON N CHANNEL IGBT |
|
| 5 | MG150J7KS61 |
Mitsubishi Electric |
High Power Switching Applications Motor Control Applications |
|
| 6 | MG150M2YK1 |
ETC |
TRANSISTOR MODULES |
|
Desde 2024. D4U Semiconductor.
|