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MG150J1BS11 |
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| Part Number | MG150J1BS11 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA IGBT Module Silicon N Channel IGBT MG150J1BS11 MG150J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case.... |
| Features |
)
Test Condition VGE = ±20V, VCE = 0 VCE = 600V, VGE = 0 VCE = 5V, IC = 150mA IC = 150A, VGE = 15V VCE = 10V, VGE = 0, f = 1MHz
―
MG150J1BS11
Min Typ. Max Unit
― ― ±500 nA
― ― 1.0 mA
3.0 ― 6.0 V
― 2.3 2.7 V
― 12000 ―
pF
― 0.3 0.8
― 0.4 1.0 µs
― 0.6 1.0
― 1.0 1.6
― ― 0.278 °C / W
2 2003-04-11
MG150J1BS11
3 2003-04-11
MG150J1BS11
4 2003-04-11
MG150J1BS11
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent elect... |
| Document |
 MG150J1BS11 Data Sheet
PDF 163.28KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MG150J1ZS50 |
Toshiba Semiconductor |
Silicon N Channel IGBT |
|
| 2 | MG150J2YS50 |
Toshiba |
N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
|
| 3 | MG150J7KS50 |
Toshiba |
TOSHIBA GTR Module Silicon N Channel IGBT |
|
| 4 | MG150J7KS60 |
Toshiba Semiconductor |
GTR MODULE SILICON N CHANNEL IGBT |
|
| 5 | MG150J7KS61 |
Mitsubishi Electric |
High Power Switching Applications Motor Control Applications |
|
| 6 | MG150M2YK1 |
ETC |
TRANSISTOR MODULES |
|
Desde 2024. D4U Semiconductor.
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