GME 2SB Hoja de datos

No.	parte #	Fabricante	Descripción
1	2SB624	GME	Silicon Transistor  High DC current gain.hFE: 200TYP (VCE=-1.0V,IC=-100mA)  Complimentary to the 2SD596. Pb Lead-free 2SB624 APPLICATIONS  Audio frequency amplifier.  Switching appilication. ORDERING INFORMATION Type No. Marking 2SB624 BV1/BV2/BV3/BV4/BV5
2	2SB766	GME	Silicon PNP Transistor  Large collector power dissipation PC.  Mini Power type package,allowing Pb Lead-free downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Production specification 2SB766 ORDERING INFORMATION
3	2SB1119	GME	PNP Epitaxial Planar Silicon Transistors  Very small size making it easy to provide High-density,small-size hybrid IC’s. Pb Lead-free Production specification 2SB1119 ORDERING INFORMATION Type No. Marking 2SB1119 BB SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwi
4	2SB1202	GME	PNP Epitaxial Planar Silicon Transistors z Adoption of FBET,MBIT processes. Pb z Large current capacity and wide ASO. Lead-free z Low collector-to-emitter saturation voltage. z Fast switching speed. z Small and slim package making it easy to Make 2SB1202-used sets smaller. APPLICATIO
5	2SB1274	GME	PNP Epitaxial Planar Silicon Transistors  Good Linearity of hfe.  Complementary to KTD2060 Pb Lead-free Production specification 2SB1274 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage
6	2SB1260	GME	Power Transistor z High breakdown voltage and high current. BVCEO=-80V,IC=-1A z Good hFEVLinearity. z Low VCE(sat). z Complements the 2SD1898. Pb Lead-free APPLICATIONS z Epitaxial planar type PNP silicon transistor Production specification 2SB1260 SOT-89 ORDERIN
7	2SB1218A	GME	PNP Silicon Transistor  High forward current transfer ratio hFE  Excellent HFE Linearity.  Complements the 2SD1819A. Pb Lead-free APPLICATIONS  For general purpose amplification. Production specification 2SB1218A ORDERING INFORMATION Type No. Marking 2SB1218A B
8	2SB1308	GME	Power Transistor  Low saturation voltage,typically VCE(sat)=-0.45(Max) at IC/IB=-1.5A/-0.15A Pb Lead-free  Excellent DC current gain characterisitics.  Complementary the 2SD1963. Production specification 2SB1308 ORDERING INFORMATION Type No. Marking 2SB130
9	2SB798	GME	PNP Epitaxial Planar Silicon Transistors z Low collector-emitter saturation Pb Lead-free voltage VCE(sat).<-0.4V(IC=-0.1A,IB=-100mA) z Excellent DC Current Gain Linearity: HFE=100 TYP.(VCE=-1.0V IC=-0.1 Production specification 2SB798 ORDERING INFORMATION Type No. Marking 2SB798
10	2SB1184	GME	Power Transistor z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) z Complements the 2SD1760. 2SB1184 Pb Lead-free APPLICATIONS z z Epitaxial planar type. PNP silicon transistor. TO-252 MAXIMUM RATING operating temperature range applies unless otherwise speci
11	2SB1185	GME	Power Transistor  Low VCE(sat). VCE(sat)=-0.5V(TYP.) (IC/IB=-2A/-0.2A)  Complements the 2SD1762. Pb Lead-free Production specification 2SB1185 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit
12	2SB1243	GME	Power Transistor z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) z Complements the 2SD1864. APPLICATIONS z Epitaxial planar type. z PNP silicon transistor. Pb Lead-free Production specification 2SB1243 TO-251 MAXIMUM RATING operating temperature range applie
13	2SB1261	GME	PNP Epitaxial Planar Silicon Transistors z High hFE hFE=100 to 400. z Low VCE(sat0 VCE(sat)≤0.3V. Pb Lead-free Production specification 2SB1261 ORDERING INFORMATION Type No. Marking 2SB1261 1261 SOT-89 Package Code SOT-89 MAXIMUM RATING operating temperature range applies unless ot
14	2SB766A	GME	Silicon PNP Transistor  Large collector power dissipation PC.  Complementary to 2SD874A. Pb Lead-free  Mini Power type package,allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Production specification
15	2SB709A	GME	Silicon Epitaxial Planar Transistor  High forward current transfer ratio hFE.  Mini type package, allowing downsizing Pb Lead-free of the equipment and automatic insertion through the tape packing and the magazine packing. 2SB709A APPLICATIONS  For general amplification comple
16	2SB1440	GME	Silicon PNP epitaxial planer type Transistor  Low collector-emitter saturation voltage VCE(sat). Pb Lead-free  Mini Power type package,allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.  Complementary the 2SD2185. Production
17	2SB1424	GME	Transistor  Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). Pb Lead-free  Excellent DC current gain characterisitics.  Complementary the 2SD2150. 2SB1424 APPLICATIONS  This device is designed as a general purpose amplifier and switching. ORDERING INFORMA
18	2SB861	GME	PNP Epitaxial Silicon Transistor  Low Frequency Power Amplifer Coloe TV Vertical Deflection Output Complementary Pb Pair With 2SD1138. Lead-free Production specification 2SB861 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Par
19	2SB1188	GME	Medium power transistor z Low VCE(SAT)=-0.5V(Typ.) (IC/IB=-1.5A/-0.15A). z Complementary the 2SD1766. Pb Lead-free 2SB1188 APPLICATIONS z Epitaxial planar type. z PNP silicon transistor. ORDERING INFORMATION Type No. Marking 2SB1188 BCP/BCQ/BCR SOT-23 Package Code
20	2SB1240	GME	Medium Power Transistor z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) z Complements the 2SD1862. APPLICATIONS z Epitaxial planar type. z PNP silicon transistor. Pb Lead-free Production specification 2SB1240 TO-251 MAXIMUM RATING operating temperature range applie