Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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2SB1185 |
| Part Number | 2SB1185 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220Fa package ·Low collector saturation votlage ·Complement to type 2SD1762 APPLICATIONS ·For use in low frequency power amplifer applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage. |
| Features | tage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-1mA; IB=0 IC=-50µA; IE=0 IE=-50µA; IC=0 IC=-2A ;IB=-0.2A IC=-2A ;IB=-0.2A VCB=-40V; IE=0 VEB=-4V; IC=0 IC=-500mA ; VCE=-3V IC=-0.5A; VCE=-5V IE=0;f=1MHz ; VCB=-10V 60 MIN -50 -60 -5 2SB1185 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat. |
2SB1185 |
| Part Number | 2SB1185 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -2A ·Complement to Type 2SD1762 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier appli. |
| Features | SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -40V; IE= 0 IEBO E. |
2SB1185 |
| Part Number | 2SB1185 |
| Manufacturer | Rohm |
| Title | Power Transistor |
| Description | Transistors Power Transistor (*60V, *3A) 2SB1184 / 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: mm) (96-128-B57) 223. |
| Features | 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: mm) (96-128-B57) 223 Transistors FAbsolute maximum ratings (Ta = 25_C) 2SB1184 / 2SB1243 / 2SB1185 FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classif. |
2SB1185 |
| Part Number | 2SB1185 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon PNP transistor |
| Description | TO-220F PNP 。Silicon PNP transistor in a TO-220F Plastic Package. / Features VCE(sat)， 2SD1762 。 Low VCE(sat),complementary pair with 2SD1762. / Applications 。 Power amplifier applications. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classi. |
| Features | VCE(sat)， 2SD1762 。 Low VCE(sat),complementary pair with 2SD1762. / Applications 。 Power amplifier applications. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range D 60～120 E 100～200 F 160～320 http://www.fsbrec.com 1/6 2SB1185 Rev.F Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Pa. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1180 |
Panasonic |
Silicon PNP Transistor |
|
| 2 | 2SB1180A |
Panasonic |
Silicon PNP Transistor |
|
| 3 | 2SB1181 |
Rohm |
Power Transistor |
|
| 4 | 2SB1181 |
Kexin |
Power Transistor |
|
| 5 | 2SB1182 |
Rohm |
Medium power Transistor |
|
| 6 | 2SB1182 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 7 | 2SB1182 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
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| 8 | 2SB1182 |
Kexin |
Medium Power Transistor |
|
| 9 | 2SB1182 |
Weitron |
PNP PLASTIC ENCAPSULATE TRANSISTORS |
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| 10 | 2SB1182 |
UTC |
PNP TRANSISTOR |
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Desde 2024. D4U Semiconductor.
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