Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SB1184 |
| Part Number | 2SB1184 |
| Manufacturer | Kexin |
| Title | Power transistor |
| Description | SMD Type Power transistor 2SB1184 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). PNP silicon transistor. 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -. |
| Features | Low VCE(sat). PNP silicon transistor. 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dis. |
2SB1184 |
| Part Number | 2SB1184 |
| Manufacturer | Weitron |
| Title | PNP Transistor |
| Description | 2SB1184 PNP PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free Features: * Low VCE(sat). ). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) MAXIMUM RATINGS (TA=25ºC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –Continuous Col. |
| Features |
* Low VCE(sat). ). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) MAXIMUM RATINGS (TA=25ºC unless otherwise noted)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range 1.BASE 2.COLLECTOR 3.EMITTER TO-251 V V V A W ˚C ˚C 1.BASE 2.COLLECTOR 3.EMITTER 2 3 Symbol V CBO. |
2SB1184 |
| Part Number | 2SB1184 |
| Manufacturer | GME |
| Title | Power Transistor |
| Description | Production specification Power Transistor FEATURES z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) z Complements the 2SD1760. 2SB1184 Pb Lead-free APPLICATIONS z z Epitaxial planar type. PNP silicon transistor. TO-252 MAXIMUM RATING operating temperature range applies unless otherwise spe. |
| Features | z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) z Complements the 2SD1760. 2SB1184 Pb Lead-free APPLICATIONS z z Epitaxial planar type. PNP silicon transistor. TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Collector-Base Volage Value Units VCBO -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC . |
2SB1184 |
| Part Number | 2SB1184 |
| Manufacturer | LGE |
| Title | PNP Transistor |
| Description | 1. BASE 2. COLLECTOR 3. EMITTER 2SB1184(PNP) TO-251/TO-252-2L Transistor TO-251 1 23 Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Complements the 2SD1760 / 2SD1864. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units TO-252-2L VCBO Collector. |
| Features |
Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Complements the 2SD1760 / 2SD1864.
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
TO-252-2L
VCBO
Collector Base Voltage
-60 V
VCEO
Collector-Emitter Voltage
-50 V
VEBO
Emitter-Base Voltage
-5 V
IC
Collector Current –Continuous -3 A PC Collector Power Dissipation 1W TJ Junction Temperatur. |
2SB1184 |
| Part Number | 2SB1184 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon PNP transistor |
| Description | TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package. / Features , 2SD1760 。 Low VCE(sat),complements the 2SD1760. / Applications 。 Power amplifier applications. / Equivalent Circuit / Pinning 12 3 4 PIN1：Base PIN 2,4：Collector PIN 3：Emitter / hFE Classifications & Ma. |
| Features | , 2SD1760 。 Low VCE(sat),complements the 2SD1760. / Applications 。 Power amplifier applications. / Equivalent Circuit / Pinning 12 3 4 PIN1：Base PIN 2,4：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range P 82～180 Q 120～270 R 180～390 http://www.fsbrec.com 1/6 2SB1184 Rev.E May.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Pa. |
2SB1184 |
| Part Number | 2SB1184 |
| Manufacturer | Secos |
| Title | PNP Transistor |
| Description | 2SB1184 Elektronische Bauelemente -3A , -60V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Designed for general Low VCE(sat) D-Pack (TO-252) CLASSIFICATION OF hFE Product-Rank Range 2SB1184-P 82~180 2SB1184-Q 120~270 2SB1184-R . |
| Features | Designed for general Low VCE(sat) D-Pack (TO-252) CLASSIFICATION OF hFE Product-Rank Range 2SB1184-P 82~180 2SB1184-Q 120~270 2SB1184-R 180~390 A B C D PACKAGE INFORMATION Package TO-252 MPQ 2.5K Leader Size 13 inch Collector M K GE HF N O P J 2 REF. 1 Base 3 Emitter A B C D E F G H Millimeter Min. Max. 6.35 6.8 5.20 5.50 2.15 2.40 0.45 0.58 6.8 7.5 2.40 3.0 5.40 6.25 0.64 1.20 REF. . |
2SB1184 |
| Part Number | 2SB1184 |
| Manufacturer | Rohm |
| Title | Power Transistor |
| Description | Power Transistor (-60V, -3A) 2SB1184 / 2SB1243 Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2) Complements the 2SD1760 / 2SD1864. Dimensions (Unit : mm) 2SB1184 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 2SB1243 6.8±0.2 2.5±0.2 1.5±0.3 4.4±0.2 1.0 0.. |
| Features |
1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A)
2) Complements the 2SD1760 / 2SD1864.
Dimensions (Unit : mm) 2SB1184 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 2SB1243 6.8±0.2 2.5±0.2 1.5±0.3 4.4±0.2 1.0 0.9 1.5 2.5 9.5±0.5 +0.3 −0.1 0.9 5.5 Structure Epitaxial planar type PNP silicon transistor 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 0.55±0.1 1.0±0.2 (1) (. |
2SB1184 |
| Part Number | 2SB1184 |
| Manufacturer | JCET |
| Title | PNP Transistor |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SB1184 TRANSISTOR (PNP) FEATURES z Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) z Complements the 2SD1760 / 2SD1864. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Val. |
| Features |
z Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) z Complements the 2SD1760 / 2SD1864.
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector Base Voltage
-60 V
VCEO
Collector-Emitter Voltage
-50 V
VEBO
Emitter-Base Voltage
-5 V
IC
Collector Current –Continuous -3 A PC Collector Power Dissipation 1W TJ Junction Temperature 150 ℃. |
2SB1184 |
| Part Number | 2SB1184 |
| Manufacturer | LZG |
| Title | SILICON PNP TRANSISTOR |
| Description | 2SB1184(3CA1184) :。 PNP /SILICON PNP TRANSISTOR Purpose: Power amplifier applications。 :, 2SD1760(3DA1760) 。 Features: Low VCE(sat),complements the 2SD1760(3DA1760). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC PC PC (Tc=25℃) Tj Tstg -60 -50 -5.0 -3.0 1.0 15 150 -. |
| Features | Low VCE(sat),complements the 2SD1760(3DA1760). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC PC PC (Tc=25℃) Tj Tstg -60 -50 -5.0 -3.0 1.0 15 150 -55～150 V V V A W W ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob IC=-50μA IC=-1.0mA IE=-50μA VCB=-40V VEB=-4.0V . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1180 |
Panasonic |
Silicon PNP Transistor |
|
| 2 | 2SB1180A |
Panasonic |
Silicon PNP Transistor |
|
| 3 | 2SB1181 |
Rohm |
Power Transistor |
|
| 4 | 2SB1181 |
Kexin |
Power Transistor |
|
| 5 | 2SB1182 |
Rohm |
Medium power Transistor |
|
| 6 | 2SB1182 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 7 | 2SB1182 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 8 | 2SB1182 |
Kexin |
Medium Power Transistor |
|
| 9 | 2SB1182 |
Weitron |
PNP PLASTIC ENCAPSULATE TRANSISTORS |
|
| 10 | 2SB1182 |
UTC |
PNP TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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