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2SB1184 |
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| Part Number | 2SB1184 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Low VCE(sat) ·Small and slim package ·Complements the 2SD1760/2SD1864 ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation... |
| Features |
llector-Base Breakdown Voltage IC= -50uA; IB= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -50uA; IC= 0
ICBO
Collector Cutoff Current
VCB= -20V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -0.5A; VCE= -3V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= -500mA; VCE= -5V
MIN TYP. MAX UNIT
-1.0 V
-1.5 V
-60
V
-50
V
-5
V
-1.0 μA
-1.0 μA
82
390
70
pF
50
MHz
hFE Classifications P Q R 82-180 120-270 180-390 isc website：www.iscse... |
| Document |
 2SB1184 Data Sheet
PDF 240.38KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1180 |
Panasonic |
Silicon PNP Transistor |
|
| 2 | 2SB1180A |
Panasonic |
Silicon PNP Transistor |
|
| 3 | 2SB1181 |
Rohm |
Power Transistor |
|
| 4 | 2SB1181 |
Kexin |
Power Transistor |
|
| 5 | 2SB1182 |
Rohm |
Medium power Transistor |
|
| 6 | 2SB1182 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 7 | 2SB1182 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 8 | 2SB1182 |
Kexin |
Medium Power Transistor |
|
| 9 | 2SB1182 |
Weitron |
PNP PLASTIC ENCAPSULATE TRANSISTORS |
|
| 10 | 2SB1182 |
UTC |
PNP TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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