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2SB1184 |
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| Part Number | 2SB1184 |
| Manufacturer | GME |
| Description | Production specification Power Transistor FEATURES z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) z Complements the 2SD1760. 2SB1184 Pb Lead-free APPLICATIONS z z Epitaxial planar type. PNP ... |
| Features |
z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) z Complements the 2SD1760.
2SB1184
Pb
Lead-free
APPLICATIONS
z z Epitaxial planar type. PNP silicon transistor.
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter Collector-Base Volage Value Units
VCBO
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-3
A
ICP
Collector Power Dissipation
-4.5
A
PC
Collector Power Dissipation
1
W
Tj ,Tstg
Junction and Storage temperature range
-55 to +150
℃
W007 Rev.A
www.gmicroele... |
| Document |
 2SB1184 Data Sheet
PDF 209.26KB |
Desde 2024. D4U Semiconductor.
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