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2SB1308 Power Transistor

2SB1308


2SB1308
Part Number 2SB1308
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2SB1308

Rohm
2SB1308
Part Number 2SB1308
Manufacturer Rohm
Title Power Transistor
Description Transistors 2SB1308 2SD1963 (94S-166-B204) (94S-342-D204) 290 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The s.
Features from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no.

2SB1308

WILLAS
2SB1308
Part Number 2SB1308
Manufacturer WILLAS
Title PNP Transistor
Description WILLAS SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ 2SB1308 THRU FM1200-M+ Pb Free Product TRANS•FIBSeaTtaOchtRuprr(oPeceNssPs )design, excellent power dissipation offers FEATURbEetSter reverse leakage current and therma.
Features .

2SB1308

TRANSYS
2SB1308
Part Number 2SB1308
Manufacturer TRANSYS
Title Plastic-Encapsulated Transistors
Description Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TRANSISTOR (PNP) SOT-89 1. BASE 0.5 -3 -30 W (Tamb=25℃) A V 2. COLLECTOR 1 3. EMITTER 2 3 Operating and storage junction t.
Features Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TRANSISTOR (PNP) SOT-89 1. BASE 0.5 -3 -30 W (Tamb=25℃) A V 2. COLLECTOR 1 3. EMITTER 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Coll.

2SB1308

Kexin
2SB1308
Part Number 2SB1308
Manufacturer Kexin
Title Power Transistor
Description SMD Type Power Transistor 2SB1308 Transistors Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage .
Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector power dissipation Junction temperature Storage temperature * Single pulse, Pw=10ms Symbol VCBO VCEO VEBO.

2SB1308

Jin Yu Semiconductor
2SB1308
Part Number 2SB1308
Manufacturer Jin Yu Semiconductor
Title TRANSISTOR
Description 2SB1 308 TRANSISTOR SOT-89-3L 1. BASE FEATURES z Power Transistor z Excellent DC current Gain z Low Collector-emitter Saturation Voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Bas.
Features z Power Transistor z Excellent DC current Gain z Low Collector-emitter Saturation Voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -30 .

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