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2SB1308 |
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| Part Number | 2SB1308 |
| Manufacturer | Kexin |
| Description | SMD Type Power Transistor 2SB1308 Transistors Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maxi... |
| Features |
Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector power dissipation Junction temperature Storage temperature * Single pulse, Pw=10ms Symbol VCBO VCEO VEBO IC ICP * PC Tj Tstg Rating -30 -20 -6 -3 -5 0.5 150 -55 to +150 Unit V V V A A W
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emi... |
| Document |
 2SB1308 Data Sheet
PDF 68.08KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1300 |
NEC |
PNP SILICON TRANSISTOR |
|
| 2 | 2SB1301 |
Renesas |
PNP SIlicon Transistor |
|
| 3 | 2SB1302 |
Sanyo Semicon Device |
PNP Transistor |
|
| 4 | 2SB1302 |
Kexin |
PNP Epitaxial Planar Silicon Transistors |
|
| 5 | 2SB1302 |
ON Semiconductor |
Bipolar Transistor |
|
| 6 | 2SB1308 |
Rohm |
Power Transistor |
|
Desde 2024. D4U Semiconductor.
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