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2SB1308 |
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| Part Number | 2SB1308 |
| Manufacturer | TRANSYS |
| Description | Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TRANSISTOR (PNP) SOT-89 1.... |
| Features |
Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO:
TRANSISTOR (PNP)
SOT-89
1. BASE
0.5 -3 -30
W (Tamb=25℃) A V
2. COLLECTOR 1 3. EMITTER 2 3
Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency * Measured using pulse current.
unless otherwise specified)
Test conditions MIN... |
| Document |
 2SB1308 Data Sheet
PDF 83.26KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1300 |
NEC |
PNP SILICON TRANSISTOR |
|
| 2 | 2SB1301 |
Renesas |
PNP SIlicon Transistor |
|
| 3 | 2SB1302 |
Sanyo Semicon Device |
PNP Transistor |
|
| 4 | 2SB1302 |
Kexin |
PNP Epitaxial Planar Silicon Transistors |
|
| 5 | 2SB1302 |
ON Semiconductor |
Bipolar Transistor |
|
| 6 | 2SB1308 |
Rohm |
Power Transistor |
|
Desde 2024. D4U Semiconductor.
|