Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SB861 |
| Part Number | 2SB861 |
| Manufacturer | GME |
| Title | PNP Epitaxial Silicon Transistor |
| Description | PNP Epitaxial Silicon Transistor FEATURES Low Frequency Power Amplifer Coloe TV Vertical Deflection Output Complementary Pb Pair With 2SD1138. Lead-free Production specification 2SB861 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter . |
| Features |
Low Frequency Power Amplifer Coloe TV Vertical Deflection Output Complementary Pb Pair With 2SD1138. Lead-free Production specification 2SB861 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -200 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Curren. |
2SB861 |
| Part Number | 2SB861 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220C package ·Complement to type 2SD1138 APPLICATIONS ·Low frequency power amplifier color TV vertical deflection output PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base vo. |
| Features | ctor cut-off current DC current gain DC current gain Output capacitance CONDITIONS IC=-50mA; RBE=: IE=-5mA; IC=0 IC=-0.5 A;IB=-50m A IC=-50mA ; VCE=-4V VCB=-120V; IE=0 IC=-50mA ; VCE=-4V IC=-0.5A ; VCE=-10V IE=0 ;VCB=-100V,f=1MHz 60 60 30 MIN -150 -6 TYP. 2SB861 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 COB MAX UNIT V V -3.0 -1.0 -1 200 V V µA pF hFE-1 classifications B 60-120 C. |
2SB861 |
| Part Number | 2SB861 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD1138 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Developed for low frequency power amplifier color TV vertical deflection outpu. |
| Features | MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; RBE= ∞ -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA ; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -3.0 V VBE(on) Base-Emitter On Voltage IC= -50mA ; VCE= -4V -1.0 V ICBO Collector Cutoff Current VCB= -120V ; IE=0 -1 μA hFE-1 DC Current Gain IC= -50mA ; VCE. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB860 |
Hitachi Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SB860 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SB860 |
Renesas |
Silicon PNP Transistor |
|
| 4 | 2SB860 |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB863 |
INCHANGE |
PNP Transistor |
|
| 6 | 2SB863 |
Toshiba |
Silicon PNP Transistor |
|
| 7 | 2SB863 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SB865 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|
| 9 | 2SB867 |
INCHANGE |
PNP Transistor |
|
| 10 | 2SB867 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|