Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SB860 |
| Part Number | 2SB860 |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon PNP Transistor |
| Description | 2SB860 Silicon PNP Triple Diffused Application Low frequency power amplifier TV vertical deflection output complementary pair with 2SD1137 Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter vo. |
| Features |
own voltage Collector cutoff current Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio V(BR)EBO I CEO I EBO VCE(sat) hFE
Maximum Collector Dissepation Curve 60 Collector power dissipaition PC (W) –10 ICmax Collector current IC (A) –3 –1.0 –0.3 –0.1 Area of Safe Operation ( –10 V, –4 A) ( –40 V, –1 A) 40 20 TC = 25°C DC Operation ( –100 V, –50 mA) –0.03 –0.. |
2SB860 |
| Part Number | 2SB860 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220C package ·Complement to type 2SD1137 APPLICATIONS ·Low frequency power amplifier TV vertical deflection output applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-. |
| Features | cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=-50mA; RBE=: IE=-1mA; IC=0 IC=-1 A;IB=-0.1 A VCE=-80V; RBE=: VEB=-3.5V; IC=0 IC=-0.5A ; VCE=-4V IC=-50mA ; VCE=-4V 50 25 MIN -100 -4 -1.0 -100 -50 250 350 TYP. MAX UNIT V V V SYMBOL V(BR)CEO V(BR)EBO VCEsat ICEO IEBO hFE-1 hFE-2 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP. |
2SB860 |
| Part Number | 2SB860 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -1A ·High Collector Power Dissipation ·Complement to Type 2SD1137 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier appl. |
| Features | ter Breakdown Voltage IC= -10mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A ICEO Collector Cutoff Current VCE= -80V; RBE= ∞ IEBO Collector Cutoff Current VEB= -3.5V; IC= 0 hFE-1 DC Current Gain IC= -0.5A; VCE= -4V hFE-2 DC Current Gain IC= -50mA; VCE= -4V 2SB860 MIN TYP. MAX UNIT -100 V -4 V . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB861 |
Hitachi Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SB861 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SB861 |
GME |
PNP Epitaxial Silicon Transistor |
|
| 4 | 2SB861 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SB863 |
INCHANGE |
PNP Transistor |
|
| 6 | 2SB863 |
Toshiba |
Silicon PNP Transistor |
|
| 7 | 2SB863 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SB865 |
Sanyo Semicon Device |
PNP/NPN Transistors |
|
| 9 | 2SB867 |
INCHANGE |
PNP Transistor |
|
| 10 | 2SB867 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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