2SB860 INCHANGE PNP Transistor Datasheet. existencias, precio

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2SB860

INCHANGE
2SB860
2SB860 2SB860
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Part Number 2SB860
Manufacturer INCHANGE
Description ·Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -1A ·High Collector Power Dissipation ·Complement to Type 2SD1137 ·Minimum Lot-to-Lot variations for robust dev...
Features ter Breakdown Voltage IC= -10mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A ICEO Collector Cutoff Current VCE= -80V; RBE= ∞ IEBO Collector Cutoff Current VEB= -3.5V; IC= 0 hFE-1 DC Current Gain IC= -0.5A; VCE= -4V hFE-2 DC Current Gain IC= -50mA; VCE= -4V 2SB860 MIN TYP. MAX UNIT -100 V -4 V -1.0 V -100 μA -50 μA 50 250 25 350 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is pr...

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