2SB860 |
Part Number | 2SB860 |
Manufacturer | INCHANGE |
Description | ·Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -1A ·High Collector Power Dissipation ·Complement to Type 2SD1137 ·Minimum Lot-to-Lot variations for robust dev... |
Features |
ter Breakdown Voltage IC= -10mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A
ICEO
Collector Cutoff Current
VCE= -80V; RBE= ∞
IEBO
Collector Cutoff Current
VEB= -3.5V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE= -4V
hFE-2
DC Current Gain
IC= -50mA; VCE= -4V
2SB860
MIN TYP. MAX UNIT
-100
V
-4
V
-1.0
V
-100 μA
-50 μA
50
250
25
350
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is pr... |
Document |
2SB860 Data Sheet
PDF 208.50KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SB860 |
Hitachi Semiconductor |
Silicon PNP Transistor | |
2 | 2SB860 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SB860 |
Renesas |
Silicon PNP Transistor | |
4 | 2SB861 |
Hitachi Semiconductor |
Silicon PNP Transistor | |
5 | 2SB861 |
INCHANGE |
PNP Transistor | |
6 | 2SB861 |
GME |
PNP Epitaxial Silicon Transistor |