Siemens Semiconductor Group BS Hoja de datos

No.	parte #	Fabricante	Descripción
1	PEF3065NV3.2	Siemens Semiconductor Group	Signal Processing Subscriber Line Interface Codec Filter SLICOF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Pin Definition and Functions . . . . . .
2	BSP129	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) b 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for drain connection. Semiconductor Group 1 09.96 BSP 129 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown v
3	BSM181R	Siemens Semiconductor Group	IGBT plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 57 03.96 BSM 181 BSM 181 R Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteris
4	BSP75	Siemens Semiconductor Group	Smart Lowside Power Switch • Logic Level Input • Input protection (ESD) • Thermal shutdown (with restart) • Overload protection • Short circuit protection • Overvoltage protection • Current limitation Product Summary Continuous drain source voltage On-state resistance Current
5	BSP92	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor g RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown vo
6	BSS100	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 100 1.5 0.1 2 1 1 3.5 5 2 1 60 10 10 V VGS = 0 V, ID = 0.25 mA, Tj =
7	BSS145	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor JA Therminal resistance, chip-substrate- reverse side 1)RthJSR Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 65 2 0.
8	BSS89	Siemens Semiconductor Group	SIPMOS Small-Signal Transistor aracteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 240 1.5 0.1 10 10 4.5 5.3 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold v
9	BSM100GAL120DN2	Siemens Semiconductor Group	IGBT Vis - Semiconductor Group 1 Mar-29-1996 BSM 100 GAL 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 3.1 2.5
10	BSM121AR	Siemens Semiconductor Group	IGBT plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 31 03.96 BSM 121 AR Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Dr
11	BSM150GT120DN2	Siemens Semiconductor Group	IGBT 150 GT 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 2 8 6.5 3 3.7 V VGE = VCE, IC = 6 mA Collector-
12	BSM15GD120D2	Siemens Semiconductor Group	IGBT eristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 0.3 1.2 6.5 3 3.7 V VGE = VCE, IC = 0.6 mA Collector-emitter saturation voltage
13	BSM15GD60DN2	Siemens Semiconductor Group	IGBT otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.1 2.2 6.5 2.7 2.8 V VGE = VCE, IC = 0.4 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 15 A, Tj
14	BSM181	Siemens Semiconductor Group	IGBT plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 57 03.96 BSM 181 BSM 181 R Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteris
15	BSP280	Siemens Semiconductor Group	IGBT Transistor (N channel MOS input voltage-controlled High switch speed Very low tail current)
16	HYB3116160BSJ	Siemens Semiconductor Group	1M x 16-Bit Dynamic RAM 1k & 4k -Refresh include single + 3.3 V (± 0.3 V) power supply, direct interfacing with highperformance logic device families.The HYB3116160BSTL parts have a very low power „sleep mode“ suppported by Self Refresh. Ordering Information Type HYB 3116160BSJ-50 HYB 31161
17	HYB3117800BSJ-50	Siemens Semiconductor Group	2M x 8 - Bit Dynamic RAM 2k Refresh include single + 3.3 V (± 0.3V) power supply, direct interfacing with high-performance logic device families. Ordering Information Type HYB 3117800BSJ-50 HYB 3117800BSJ-60 HYB 3117800BSJ-70 Pin Names A0 to A10 A0 to A9 RAS OE I/O1-I/O8 CAS WE Row Add
18	Q62702-A3461	Siemens Semiconductor Group	Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) apacitance VR = 0, f = 1 MHz Forward resistance IF = 10 mA / 50 mA Symbol min. VBR VF – – ∆VF Values typ. – max. – 4 Unit V 0.43 0.55 – – 5.5 – – 10 0.35 – mV pF Ω – – – CT RF Semiconductor Group 2 BAT 14-099 Forward current IF = f (VF) Fo
19	PEB3065	Siemens Semiconductor Group	Signal Processing Subscriber Line Interface Codec Filter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Pin Definition and Functions . . . . . .
20	CFY35-23	Siemens Semiconductor Group	GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) l characteristics at TA = 25°C, unless otherwise specified CFY 35 ________________________________________________________________________________________________________ Characteristics Drain-source saturation current V = 2.5 V, DS Symbol min