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BSS100 |
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| Part Number | BSS100 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BSS 100 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 S Type BSS 100 Type BSS 100 BSS 100 BSS 100 Pin 2 G Marking SS 100 Pin 3 D VDS 100... |
| Features |
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit
Static Characteristics Drain- source breakdown voltage
V(BR)DSS
100 1.5 0.1 2 1 1 3.5 5 2 1 60 10 10
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
0.8
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
µA nA nA Ω 6 10
VDS = 100 V, VGS = 0 V, Tj = 25 °C VDS = 100 V, VGS = 0 V, Tj = 125 °C VDS = 20 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage current
IGSS RDS(on)
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 10 V, ID = 0.22 A VGS =... |
| Document |
 BSS100 Data Sheet
PDF 79.96KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSS100 |
Fairchild Semiconductor |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | BSS101 |
Siemens Semiconductor |
SIPMOS Small-Signal Transistor |
|
| 3 | BSS110 |
Fairchild Semiconductor |
P-Channel Enhancement Mode Field Effect Transistor |
|
| 4 | BSS110 |
Siemens Semiconductor |
SIPMOS Small-Signal Transistor |
|
| 5 | BSS110 |
NXP |
P-channel enhancement mode vertical D-MOS transistor |
|
| 6 | BSS119 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor |
|
Desde 2024. D4U Semiconductor.
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