Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
BSS100 |
| Part Number | BSS100 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Description | These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance. This produc. |
| Features | BSS100: 0.22A, 100V. RDS(ON) = 6Ω @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON) = 6Ω @ VGS = 10V High density cell design for extremely low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. _______________________________________________________________________________ D G BSS100 BSS123 S Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted BSS100 BSS. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSS101 |
Siemens Semiconductor |
SIPMOS Small-Signal Transistor |
|
| 2 | BSS110 |
Fairchild Semiconductor |
P-Channel Enhancement Mode Field Effect Transistor |
|
| 3 | BSS110 |
Siemens Semiconductor |
SIPMOS Small-Signal Transistor |
|
| 4 | BSS110 |
NXP |
P-channel enhancement mode vertical D-MOS transistor |
|
| 5 | BSS119 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor |
|
| 6 | BSS119 |
INFINEON |
SIPMOS Small-Signal Transistor |
|
| 7 | BSS119N |
Infineon Technologies |
Small-Signal-Transistor |
|
| 8 | BSS123 |
JCET |
N-Channel MOSFET |
|
| 9 | BSS123 |
NXP |
N-channel transistor Logic level FET |
|
| 10 | BSS123 |
Diodes Incorporated |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
|