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BSS100 |
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| Part Number | BSS100 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been espe... |
| Features |
BSS100: 0.22A, 100V. RDS(ON) = 6Ω @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON) = 6Ω @ VGS = 10V High density cell design for extremely low RDS(ON). Voltage controlled small signal switch. Rugged and reliable.
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D
G
BSS100
BSS123
S
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise noted
BSS100
BSS123
Units
VDSS VDGR VGSS
Drain-Source Voltage Drain-Gate Voltage (RGS < 20KΩ) Gate-Source Voltage - Continuous - Non Repetitive (TP < 50 µS)
100 100 ± 14 ± 20 0.22 0.9 0.63 -55 to 150 300 0.17 0.6... |
| Document |
 BSS100 Data Sheet
PDF 284.54KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSS100 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor |
|
| 2 | BSS101 |
Siemens Semiconductor |
SIPMOS Small-Signal Transistor |
|
| 3 | BSS110 |
Fairchild Semiconductor |
P-Channel Enhancement Mode Field Effect Transistor |
|
| 4 | BSS110 |
Siemens Semiconductor |
SIPMOS Small-Signal Transistor |
|
| 5 | BSS110 |
NXP |
P-channel enhancement mode vertical D-MOS transistor |
|
| 6 | BSS119 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor |
|
Desde 2024. D4U Semiconductor.
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