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BSM181 |
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| Part Number | BSM181 |
| Manufacturer | Siemens Semiconductor Group |
| Description | SIMOPAC® Module BSM 181 BSM 181 R VDS = 100 V ID = 200 A R DS(on) = 8.5 mΩ q q q q q q Power module Single switch N channel Enhancement mode Package with insulated metal base plate 1) Package outli... |
| Features |
plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1.
Semiconductor Group
57
03.96
BSM 181 BSM 181 R
Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VDS = VGS, ID = 1 mA Zero gate voltage drain current VDS = 800 V, VGS = 0 Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-state resistance VGS = 10 V, ID = 23 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(o... |
| Document |
 BSM181 Data Sheet
PDF 199.84KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSM180C12P2E202 |
ROHM |
SiC |
|
| 2 | BSM180D12P2C101 |
ROHM |
SiC |
|
| 3 | BSM180D12P3C007 |
ROHM |
SiC |
|
| 4 | BSM181F |
Siemens Semiconductor Group |
IGBT |
|
| 5 | BSM181R |
Siemens Semiconductor Group |
IGBT |
|
| 6 | BSM100GAL120DN2 |
Siemens Semiconductor Group |
IGBT |
|
Desde 2024. D4U Semiconductor.
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