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BSS89 |
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| Part Number | BSS89 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BSS 89 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 G Type BSS 89 Type BSS 89 BSS 89 BSS 89 Pin 2 D Marking SS89 Pin 3 S VDS 240 V ID ... |
| Features |
aracteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit
Static Characteristics Drain- source breakdown voltage
V(BR)DSS
240 1.5 0.1 10 10 4.5 5.3 2
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
0.8
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100 0.2
µA
VDS = 240 V, VGS = 0 V, Tj = 25 °C VDS = 240 V, VGS = 0 V, Tj = 125 °C VDS = 60 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage current
IGSS
100
nA Ω 6 10
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
RDS(on)
VGS = 10 V, ID = 0.3 A VGS = 4.5 V, I... |
| Document |
 BSS89 Data Sheet
PDF 79.51KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSS80 |
Siemens Semiconductor Group |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
|
| 2 | BSS80 |
Infineon Technologies |
PNP Transistors |
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| 3 | BSS80 |
Kexin |
PNP Silicon Switching Transistors |
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| 4 | BSS806N |
Infineon Technologies |
Small-Signal-Transistor |
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| 5 | BSS806NE |
Infineon |
Small-Signal-Transistor |
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| 6 | BSS80B |
Siemens Semiconductor Group |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
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Desde 2024. D4U Semiconductor.
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