Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
BSS80B |
| Part Number | BSS80B |
| Manufacturer | Zetex Semiconductors |
| Title | (BSS80B/C) SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS |
| Description | www.DataSheet4U.com SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 SEPTEMBER 95 PARTMARKING DETAIL 7 BSS80B - CH BSS80C - CJ BSS80B BSS80C C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Power Dissipati. |
| Features | 10mA µA nA VCB=-50V, VCB=-50V, Ta=150oC VBE=-3V IC=-150mA,VCE=-10V IC=-150mA,VCE=-10V IC=150mA,VCE=10V IC=150mA,VCE=10V nA mV V -0.4 -1.6 120 300 MHz pF ns ns ns ns VCE=-20V,IC=-50mA f=100MHz VCB=-10V,f=1MHz VCC=-30V, IC=-150mA IB1=-IB2=-15mA Rise Time Storage Time Fall Time . |
BSS80B |
| Part Number | BSS80B |
| Manufacturer | Motorola |
| Title | GENERAL PURPOSE TRANSISTOR |
| Description | ) BSS80B,C CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO vCBO vEBO 'C THERMAL CHARACTERISTICS Characteristic *Total Device. |
| Features | . |
BSS80B |
| Part Number | BSS80B |
| Manufacturer | Siemens Semiconductor Group |
| Title | PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
| Description | PNP Silicon Switching Transistors BSS 80 BSS 82 High DC current gain q Low collector-emitter saturation voltage q Complementary types: BSS 79, BSS 81 (NPN) q Type BSS 80 B BSS 80 C BSS 82 B BSS 82 C Marking CHs CJs CLs CMs Ordering Code (tape and reel) Q62702-S557 Q62702-S492 Q62702-S560 Q62702. |
| Features | 91 BSS 80 BSS 82 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BSS 80 BSS 82 Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE = 10 µA Collector-base cutoff current VCB = 50 V VCB = 50 V, TA = 150 ˚C Emitter-base cutoff current VEB = 3 V DC current gain IC =. |
BSS80B |
| Part Number | BSS80B |
| Manufacturer | Kexin |
| Title | PNP Silicon Switching Transistors |
| Description | SMD Type TransistIoCrs PNP Silicon Switching Transistors BSS80,BSS82 Features High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emi. |
| Features | High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation,TS = 77 Junction temperature . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSS80 |
Siemens Semiconductor Group |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
|
| 2 | BSS80 |
Infineon Technologies |
PNP Transistors |
|
| 3 | BSS80 |
Kexin |
PNP Silicon Switching Transistors |
|
| 4 | BSS806N |
Infineon Technologies |
Small-Signal-Transistor |
|
| 5 | BSS806NE |
Infineon |
Small-Signal-Transistor |
|
| 6 | BSS80C |
Siemens Semiconductor Group |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
|
| 7 | BSS80C |
Infineon Technologies AG |
PNP Silicon Switching Transistors |
|
| 8 | BSS80C |
Zetex Semiconductors |
(BSS80B/C) SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS |
|
| 9 | BSS80C |
Kexin |
PNP Silicon Switching Transistors |
|
| 10 | BSS80C |
Motorola |
GENERAL PURPOSE TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|